Paper Title
Characterization And Simulation Of Sige Mosfet
Abstract
Strain in silicon is a powerful technology of increasing MOSFET performance. It has improved carrier transport
properties (mobility). This relatively new technology offers opportunities in mixed signal circuits and analog circuits IC
design and manufacture. Strained silicon is a layer of silicon in which Si atoms are stretched beyond their normal interatomic
distance. This is done by putting layer of Si over substrate of Silicon germanium (SiGe). Moving silicon atoms further apart
reduces the atomic force which interferes with movement of electrons. We have explored the SiGe MOSFET to replace the
currently planar MOSFET’s. Gate length of this device is 0.1µm and channel width is 0.022µm. We have used General
Purpose Semiconductor Simulator and obtained 3D plots. Also we have used TCAD tool Athena and Atlas Simulator and
determined I-V characteristics, C-V characteristics and Id-Vg characteristics.