“Design a Low Noise Amplifier For Ultra-Wideband Applications Using Gain Enhancement Technique”
Now a days the need of compact devices with a high speed wireless communication systems are growing rapidly.
Many technologies like CMOS, GaAs, Silicon on inductor (SOI), Sapphire, GaAlAs are being used for designing of a Low
Noise Amplifier (LNA) but among all of them Complementary metal oxide semiconductor (CMOS) has become a
competitive technology and widely used for the design of a radio transceiver for various wireless communication system due
to several technology’s advantages like low power consumption, low cost and high accuracy. This presented paper proposed
the design overview of a low noise amplifier (LNA) for ultra-wide band (UWB) applications ranging from 1.6GHz-10.6GHz
using CMOS Technology. The proposed work to be carried out in such a way that to get a high gain (above 24 dB) and a low
Noise figure (less than 1.7 dB) with a good linearity and better stability with the help of the ADS simulation software and the
adaptation of 90nm CMOS process proposed a promising LNA circuit.
Index terms- LNA, UWB, feedback, matching, Gain, Noise Figure, Reflection coefficient, Stability, S-parameter.