Paper Title
The Fabrication And Characterization Of Uv Sensor Based On Tio2 Nanorods Array On Silicon Substrate Heterojunction
Abstract
A structure for ultraviolet (UV) photosensor based on rutile TiO2 nanorods (NRs) grown on p-type (111) - oriented
silicon substrate seeded with a TiO2 layer synthesized by radio-frequency (RF) reactive magnetron sputtering has been
fabricated. Chemical bath deposition (CBD) was carried out to grow rutile TiO2 NRs on Si substrate. The structural and
optical properties of the sample were reported by X-ray diffraction (XRD) and field emission-scanning electron microscopy
(FESEM) analyses. Results showed the tetragonal rutile structure of the synthesized TiO2 NRs. Optical properties were
further examined by photoluminescence spectroscopy, and a high-intensity UV peak centered at around 366 nm compared
with visible defect peaks centered at 436 and 716 nm was observed. Upon exposure to 365 nm light (2.3 mW cm
-2
) at 5V bias
voltage, the device showed 62.8 × 102
sensitivity. In addition, the internal gain of the photosensor was 63.8, and the
photoresponse peak was 467 mAW-1
. Furthermore, the photocurrent was 6.7 × 10-4
A. The response and the recovery times
were calculated to be 48 and 40 ms, respectively, upon illumination to a pulsed UV light (365 nm) at 5V bias voltage. All of
these results demonstrate that this high-quality photosensor can be a promising candidate as a low-cost UV photodetector for
commercially integrated photoelectronic applications.
Keywords- CBD, Nanorods, Rutile TiO2, UV Photosensor.